A SPICE-Like 2T-FLOTOX Core-Cell Model for Defect Injection and Faulty Behavior Prediction in eFlash

摘要

The embedded Flash technology can be subject to complex defects creating functional faults. In this paper, we describe the different steps in the electrical modeling of 2T-FLOTOX core-cells for a good understanding of failure mechanisms. At first, we present a first order electrical model of 2T-FLOTOX core-cells which is characterized and compared with silicon data measurements based on the ATMEL 0.15μm eFlash technology. Next, we propose a study of resistive defect injections in eFlash memories to show the interest of the proposed simulation model. At the end of the paper, a table summarizes the functional fault models for different resistive defect configurations and experimental set-ups. According to these first results and with additional analysis on actual defects presented in [3] we are then able to enhance existing test solutions for eFlash testing.