Structural, electrical, and multiferroic properties of Aurivillius Bi6Fe2(Ti3-xVx)O18+delta thin films prepared by chemical solution deposition

摘要

Aurivillius type five-layered V-doped Bi6Fe2(Ti3-xVx)O18+delta (x = 0.00, 0.03, 0.06, and 0.09) thin films were prepared on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. All the thin films were crystallized in Aurivillius structures, which have been confirmed by using X-ray diffraction and Raman spectroscopy studies. On comparing the thin films, the Bi6Fe2(Ti2.94V0.06)O18+delta thin film showed the most enhanced electrical and multiferroic properties, with a leakage current density value about four orders of magnitude lower than that of the Bi6Fe2Ti3O18 thin film, for example. All of these thin films showed anti-ferromagnetic hysteresis loops at room temperature. The significant decrease in the concentration of oxygen vacancies and the formation of a stable structure caused by doping with the donor V5+-ion are related to the improved properties in the V-doped Bi6Fe2(Ti3-xVx)O18+delta thin films.