Use of Laser Trimming for the Fabrication of High Precise n-p Compensation-Doped Polycrystalline Silicon Thin-Film Resistors

摘要

In this work, the design and fabrication of n–p compensation-doped polycrystalline silicon (poly-Si) thin-film resistors (TFRs) using the laser trimming (LT) method are presented. A novel method that uses LT simulation on a compensation-doped poly-Si film is proposed to obtain a highly pre-cise resistance. The morphology and stability of the TFR were also studied. Experimental results show that the current-crowding distribution of the TFRs improved and that a high resistor value was obtained. The influence of the device structural parameters, used for device geometry, was inves-tigated in detail. The mathematical simulation and fabrication technology developed in the present study is applicable to the realization of precise TFRs with a high-value poly-Si resistor and an adjustable poly-Si resistor value.