Efficient solution of the Schroedinger-Poisson equations in layered semiconductor devices

摘要

In this paper we present several mathematical models that can be used to create approximate solutions of the three-dimensional Schroedinger-Poisson equation in layered semiconductor devices. A general algorithmic strategy that can be used to create efficient solution procedures for each of these models is described. Computational results demonstrating the accuracy and efficiency that can be obtained with the use of these models is presented.