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Superhydrophobic ZnO for EWOD Digital Microfluidic Device for Application in Micro Total Analysis System (μ-TAS)

机译:EWOD数字微流控设备用超疏水性ZnO,用于微量总分析系统(μ-TAS)

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摘要

In this paper, we present a nanostructured ZnO based superhydrophobic high dielectric constant (K) composite dielectric for EWOD digital microfluidic device for application in μ-TAS. Two fabrication methods of nannosturctured ZnO superhydrophobic surface are studied. Through electrochemical deposition, a nanostructured ZnO film with a dielectric constant of 6.21 and a maximum contact angle of 158.9° is achieved. To prevent electrical leakage, a high dielectric constant barrier is combined with hydrothermal synthesis of ZnO nanorods. The contact angle reaches 164.8° on the composite surface with a contact angle hysteresis of 11.3°. Enhancement of optical signal detected on the superhydrophobic layer is demonstrated. Using such superhydrophobic high K composite material in EWOD digital microfluidics for application in μ-TAS is proposed and has shown its potential feasibility.
机译:在本文中,我们提出了一种用于EWOD数字微流控器件的纳米结构基于ZnO的超疏水高介电常数(K)复合电介质,用于μ-TAS。研究了纳米结构化ZnO超疏水表面的两种制备方法。通过电化学沉积,获得了介电常数为6.21,最大接触角为158.9°的纳米结构ZnO薄膜。为了防止漏电,将高介电常数势垒与ZnO纳米棒的水热合成相结合。在复合材料表面上的接触角达到164.8°,接触角滞后为11.3°。证明了在超疏水层上检测到的光信号的增强。提出了在EWOD数字微流体中使用这种超疏水性高K复合材料在μ-TAS中的应用,并显示了其潜在的可行性。

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