The chemical vapour transport growth of ZnO single crystals

摘要

Recently, ZnO attracts a wide interest as a promising material for the application in optoelectronic devices working in the blue and ultraviolet region and (when doped with magnetic impurities) in spintronic devices. Unfortunately, the technology of good, large (e.g.: 2.5-5 cm in diameter) single crystals is very difficult, even as compared with other II-VI compounds. We report on the successful growth of the ZnO crystals with a chemical vapour transport (CVT) method and on the characterisation of them. The source material is synthesised at 650 deg C from oxygen and zinc vapours and subsequently, baked (as a powder) to achieve stoichiometry. The crystals grow (with the rate 1-2 mm per day) in the graphite-covered quartz ampoules containing pure (6N) hydrogen or nitrogen and a small amount of water vapour. The crystals, both as-grown and annealed in pure oxygen, are characterised by the measurements of photoluminescence spectra, transmission spectra, far infrared transmission, X-ray diffraction and electrical transport. The surface region is analysed by the secondary ion mass spectroscopy (SIMS).