首页> 外国专利> PROCESS FOR PRODUCING ZNO SINGLE CRYSTAL, SELF-SUPPORTING ZNO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF MG-CONTAINING ZNO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING MG-CONTAINING ZNO MIXED SINGLE CRYSTAL FOR USE IN THE SAME

PROCESS FOR PRODUCING ZNO SINGLE CRYSTAL, SELF-SUPPORTING ZNO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF MG-CONTAINING ZNO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING MG-CONTAINING ZNO MIXED SINGLE CRYSTAL FOR USE IN THE SAME

机译:生产ZNO单晶的过程,自持的ZNO单晶晶片,含MG的ZNO混合单晶的自支撑晶片,和含MG的含ZNO的混合晶状体的生产过程

摘要

A ZnO single crystal can be grown on a seed crystal substrate using a liquid phase epitaxial growth method by mixing and melting ZnO as a solute and a solvent, bringing the crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. A self-supporting Mg-containing ZnO mixed single crystal wafer can be obtained as follows. A Mg-containing ZnO mixed single crystal is grown using a liquid phase epitaxial growth method by mixing and melting ZnO and MgO forming a solute and a solvent, then bringing a seed crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. Then, the self-supporting Mg-containing ZnO mixed single crystal wafer is obtained by removing the substrate by polishing or etching, and polishing or etching a surface, on the side of -c plane, of the single crystal grown by the liquid phase epitaxial growth method.
机译:可以使用液相外延生长方法,通过将ZnO作为溶质和溶剂混合并熔融,使晶体基板与所得熔体直接接触,并提起籽晶基板,来使用液相外延生长方法在籽晶基板上生长ZnO单晶。连续或间歇地。可以如下获得自支撑的含镁的ZnO混合单晶晶片。使用液相外延生长法,通过将形成溶质和溶剂的ZnO和MgO混合并熔融,然后使晶种衬底直接与所得熔体接触,并提起晶种,来生长含Mg的ZnO混合单晶。晶体基板连续或间歇。然后,通过抛光或蚀刻除去基板,并抛光或蚀刻通过液相外延生长的单晶的-c面一侧的表面,从而获得自支撑的含Mg的ZnO混合单晶晶片。生长方法。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号