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PROCESS FOR PRODUCING ZNO SINGLE CRYSTAL, SELF-SUPPORTING ZNO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF MG-CONTAINING ZNO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING MG-CONTAINING ZNO MIXED SINGLE CRYSTAL FOR USE IN THE SAME
PROCESS FOR PRODUCING ZNO SINGLE CRYSTAL, SELF-SUPPORTING ZNO SINGLE-CRYSTAL WAFER OBTAINED BY THE SAME, SELF-SUPPORTING WAFER OF MG-CONTAINING ZNO MIXED SINGLE CRYSTAL, AND PROCESS FOR PRODUCING MG-CONTAINING ZNO MIXED SINGLE CRYSTAL FOR USE IN THE SAME
A ZnO single crystal can be grown on a seed crystal substrate using a liquid phase epitaxial growth method by mixing and melting ZnO as a solute and a solvent, bringing the crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. A self-supporting Mg-containing ZnO mixed single crystal wafer can be obtained as follows. A Mg-containing ZnO mixed single crystal is grown using a liquid phase epitaxial growth method by mixing and melting ZnO and MgO forming a solute and a solvent, then bringing a seed crystal substrate into direct contact with the resultant melt, and pulling up the seed crystal substrate continuously or intermittently. Then, the self-supporting Mg-containing ZnO mixed single crystal wafer is obtained by removing the substrate by polishing or etching, and polishing or etching a surface, on the side of -c plane, of the single crystal grown by the liquid phase epitaxial growth method.
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