INFLUENCE OF ANNEALING ON THE OPTICAL PARAMETERS OF In_2S_3 THIN FILMS PRODUCED BY THERMAL EVAPORATION

摘要

In_2S_3 thin films are grown on glass substrates by vacuum thermal evaporation followed by annealing in vacuum between 330 and 400℃ for different time durations. We have investigated the influence of the annealingparameters on the characteristics of thin films. It is shown that thermal treatment changed the crystal structure and optical energy band gap of In_2S_3 thin films. Two energy band gaps were determined for all the films, one indirect and the other direct.