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首页> 外文期刊>Journal de Physique, IV: Proceedings of International Conference >Analysis of the Intermediate Layers Generated at the Film-Substrate Interface During the CVD Process of Diamond Synthesis
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Analysis of the Intermediate Layers Generated at the Film-Substrate Interface During the CVD Process of Diamond Synthesis

机译:金刚石合成CVD过程中膜-基体界面产生的中间层分析

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摘要

In the present work the structural characteristics of diamond films, obtained by means of Hot Filament Chemical Vapour Deposition (HFCVD), on various substrates (glassy carbon, soda-lime glass, and titanium) are correlated with the formation of different intermediate carbonaceous layers at the film/substrate interface. The surface morphology of the diamond was studied by electron microscopy, whereas the structural characteristics of the intermediate layers were investigated by means of reflection high-energy electron diffraction (RHEED) and X-ray powder diffraction (XRPD) techniques. Graphite-like and amorphous structures, respectively, were identified at the interface with glassy carbon and soda-lime glass substrates. RHEED and Grazing Incidence X-ray Diffraction measurements allowed us to determine the stratification sequence of the intermediate carbonaceous layers grown on Ti. The XRPD technique was used to study the growth kinetics of diamond, TiC and TiH2 layers during the coating process. The features of diamond nucleation on the various substrates are discussed with reference to the structure of carbonaceous transition layers formed at the substrate/film interface.
机译:在本工作中,通过热丝化学气相沉积(HFCVD)在各种基材(玻璃碳,钠钙玻璃和钛)上获得的金刚石膜的结构特征与在处形成不同的中间碳质层相关。薄膜/基材界面。通过电子显微镜研究了金刚石的表面形态,而通过反射高能电子衍射(RHEED)和X射线粉末衍射(XRPD)技术研究了中间层的结构特征。在与玻璃碳和钠钙玻璃衬底的界面处分别鉴定出石墨状和非晶态结构。 RHEED和掠入射的X射线衍射测量使我们能够确定在Ti上生长的中间碳质层的分层顺序。 XRPD技术用于研究涂层过程中金刚石,TiC和TiH2层的生长动力学。参考在基板/膜界面处形成的碳质过渡层的结构,讨论了各种基板上金刚石成核的特征。

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