首页> 外文期刊>Journal de Physique, IV: Proceedings of International Conference >Growing of SixGe1-xO2 single crystals with a-quartz structure and their characterization
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Growing of SixGe1-xO2 single crystals with a-quartz structure and their characterization

机译:具有a石英结构的SixGe1-xO2单晶的生长及其表征

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Crystals of alpha-SixGe1-xO2 solid solution is a new material with relatively high piezoelectric coefficients and temperature stability. Theoretical and experimental study on the development of reliable and reproducible method of alpha-SixGe1-xO2 crystal growth under hydrothermal conditions will be proposed in the report. Influence of the composition of solutions, T-P parameters, growth rates of different faces, capture and distribution of Si and Ge on morphology and internal structure of the crystals, and the basic crystallochemical characteristics and properties of the crystals have been investigated.The most important result of the performed investigations is an experimental proof of the growth of alpha-SixGe1-xO2 single crystals with alpha-quartz structure under conditions of the stable existence of trigonal quartz and tetragonal germanium oxide phases. The maximum GeO2 content (38,78 mass%) has been attained while crystal growth in aqueous solutions of ammonium fluoride at temperature of 700 degrees C and pressure of the order of 180MPa. Crystals grown in alkaline solutions at similar T-P parameters are characterized by the maximum GeO2 content of 25 mass%. A temperature of the alpha-beta polymorphous transition of alpha-SixGe1-xO2 with GeO2 content of 38 mass% has reached 840 degrees C (instead 573 degrees C of alpha-quartz).GeO2 portion increases in alpha-SixGe1-xO2 crystals at temperature and growth rates rise. The highest GeO2 content belongs to the growth sectors of positive and negative rhombohedra; the minimum - belongs to the growth sectors of hexagonal prism. A regular rise of the unit cell parameters and refraction indices are observed at GeO2 portion increase in alpha-SixGe1-xO2 crystals. An appearance of new absorption bands was found in IR-spectra, caused by a formation of Si-O-Ge bridge bonds. A shifting of practically all bands in the IR-spectra of the combinational scattering for a distance of 10-15 cm(-1) into the region of short-wave vibrations seems to be related to this very fact. The basic piezoelectric constants d(11) and d(14) alpha-SixGe1-xO2 crystals have increased as compared to quartz by approximately two times.
机译:α-SixGe1-xO2固溶体晶体是一种具有较高压电系数和温度稳定性的新型材料。该报告提出了在水热条件下发展可靠且可重复的α-SixGe1-xO2晶体生长方法的理论和实验研究。研究了溶液组成,TP参数,不同面的生长速率,Si和Ge的俘获和分布对晶体的形态和内部结构的影响,以及晶体的基本晶体化学特性和性质。最重要的结果进行的研究的结果是在稳定存在三角石英和四方氧化锗相的条件下具有α-石英结构的α-SixGe1-xO2单晶生长的实验证明。在氟化铵水溶液中在700摄氏度的温度和180 MPa的压力下晶体生长的同时,达到了最大的GeO2含量(38,78质量%)。在碱性溶液中以相似的T-P参数生长的晶体的特征在于最大GeO2含量为25质量%。 GeO2含量为38质量%的α-SixGe1-xO2的α-β多态转变温度已达到840摄氏度(而不是573摄氏度的石英),Ge-O2比例随温度升高而增加。增长率上升。最高的GeO2含量属于正菱形和负菱形的增长部门;最小-属于六角棱镜的生长扇区。在α-SixGe1-xO2晶体中,GeO2的增加部分会观察到晶胞参数和折射率的规律上升。由于形成Si-O-Ge桥键,在IR光谱中发现了新的吸收带。实际上,组合散射的红外光谱中的所有波段向短波振动区域的偏移为10-15 cm(-1),这似乎都与该事实有关。与石英相比,基本压电常数d(11)和d(14)alpha-SixGe1-xO2晶体增加了大约两倍。

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