The effect of the hydrofluoric acid etchant-silicon system anisotropy on the shape of pores formed upon electrochemical etching of silicon

摘要

The shape of nanopores formed in silicon upon electrochemical etching in hydrofluoric acid solutions has been explained by the effect of anisotropy of the components involved in etching. A semiempirical formula that allows one to characterize, with a certain accuracy, the degree of anisotropy of the etchant-silicon system and describe the shape of the resulting pores has been suggested.