Carrier compensation in (001) n-type diamond by phosphorus doping

摘要

Phosphorus (P) doping of (001) diamond was investigated focusing on [CH_4]/[H_2] and [PH_3]/[CH_4] gas flow ratio dependence during homoepitaxial growth. P concentration was primarily controlled by gas flow ratio in the same manner as (111) doping, although the controllable range stayed narrow due to lower doping efficiency. Electrical properties of (001) P-doped diamond films were investigated by Hall effect measurements and the doping level dependence of carrier compensation was discussed. The compensation ratio remained almost constant with increasing P concentration, indicating that P doping itself induces acceptor states compensating P donors.