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Carbon nanotubes growth by HFCVD: effect of the process parameters and catalyst preparation

机译:HFCVD法生长碳纳米管:工艺参数和催化剂制备的影响

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Carbon nanotubes (CNTs) were grown on nickel catalysts by hot filament chemical vapour deposition (HFCVD) using H_2 and CH_4 as gas precursors. CNTs with different characteristics were observed varying some growth parameters, such as the substrate temperature, the total pressure and the methane concentration. These parameters were optimised in order to obtain untangled CNTs with high density and smooth walls. Catalyst nanoparticles were obtained through the clustering of Ni thin films deposited by sputtering techniques. CNTs grown on samples with the silicon native oxide or with a SiO_2 coating between Si substrate and Ni film were compared. Catalytic layers and CNTs were characterised by SEM and XPS.
机译:使用H_2和CH_4作为气体前体,通过热丝化学气相沉积(HFCVD)在镍催化剂上生长碳纳米管(CNT)。观察到具有不同特性的CNT会随着某些生长参数的变化而变化,例如衬底温度,总压力和甲烷浓度。优化这些参数以获得具有高密度和光滑壁的不缠结的CNT。通过溅射技术沉积的Ni薄膜的聚集获得了催化剂纳米颗粒。比较了在具有硅天然氧化物或在Si衬底和Ni膜之间具有SiO_2涂层的样品上生长的CNT。通过SEM和XPS对催化层和CNT进行了表征。

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