Carbon nanotubes field emission integrated triode amplifier array

摘要

Because the high frequency operation of a field emission triode amplifier is dictated by the cutoff frequency and not the electron transit time, a high ratio of transconductance, g_m to the overlapping interelectrode capacitance, C_g is the desired outcome. Consequently, to achieve high frequency performance of the CNT amplifier array in this study, C_g was reduced by performing a dual-mask photolithography process to minimize the overlapping gate area, and, the insulating layer's thickness was increased. Moreover, wedge-shaped CNT emitter arrays are employed to increase emission sites, resulting in return higher g_m. Both dc and ac performance of the amplifier were characterized. The triode amplifier array exhibited a high current of approx 0.32 mA (74 mA/cm~2), g_m of approx 63 mu S and voltage gain of ~ 18 dB. Frequency response of the triode amplifier up to 20 kHz was also investigated. A theoretical cutoff frequency of >70 MHz could be achieved with proper shielding of the test setup.