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Effects of NH{sub}3 plasma pretreatment on the growth of carbon nanotubes

机译:NH {sub} 3等离子体预处理对碳纳米管生长的影响

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In CVD, it is believed that the catalyst is a crucial parameter for the diameter and the density of the CNTs Typical thin catalyst film thickness should be less than 20 nm, While the catalyst film thickness is more than 30 nm, it is very difficult to grow thinner CNTs. Pretreatment further to break the film into desired particles should be taken. In this paper, the pretreatment effect of NH{sub}3 plasma on GNT growth was studied, Multi-wall carbon nanotubes have been grown with NH{sub}3 plasma pretreatment to the thick catalyst films by CVD. The diameter and density of CNTs changed with the plasma power and pretreatment time. The diameter of grown CNTs decreased from 10 to 4 nm as plasma intensity increased. NH{sub}3 plasma power and pretreatment time have to be optimized in order to grow uniform and density controlled nanotubes.
机译:在CVD中,认为催化剂是碳纳米管直径和密度的关键参数。典型的薄催化剂膜厚度应小于20 nm,而催化剂膜厚度大于30 nm,则很难生长更薄的碳纳米管。应该采取进一步的处理以将膜破碎成所需的颗粒。本文研究了NH {sub} 3等离子体对GNT生长的预处理作用,利用NH {sub} 3等离子体预处理通过化学气相沉积法制备了厚壁碳纳米管。碳纳米管的直径和密度随等离子体功率和预处理时间而变化。随着等离子体强度的增加,生长的CNT的直径从10纳米减小到4纳米。为了生长均匀且受密度控制的纳米管,必须优化NH {sub} 3的等离子体功率和预处理时间。

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