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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Transition of carbon nanotubes growth mode on NH3 plasma-modified Ni films at different plasma powers
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Transition of carbon nanotubes growth mode on NH3 plasma-modified Ni films at different plasma powers

机译:在不同等离子功率下,碳纳米管在NH3等离子体改性的Ni膜上的生长模式的转变

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摘要

Catalytic Ni films on Si substrates were modified by NH3 plasma, and carbon nanotubes (CNTs) were then grown on the Ni films by plasma enhanced chemical vapor deposition. The effect of the NH3 modification power was investigated in relation to the growth of CNTs. As the modification power increased above 20 W, the structural phase of the Ni films evolved from pure Ni to Ni-suicide (Ni-Si) phase. This could be explained by the inter-diffusion of Ni and Si, due to the energetic ion bombardments, which resulted in the formation of Ni-Si layer on the Si substrate. In addition, the growth mode of as-grown CNTs changed from top-growth to base-growth mode after the formation of the Ni-Si phase. This indicated that the Ni-Si layer adhered to the Si substrate More strongly than the Ni layer and the formation of the Ni-Si layer led the change of the CNT growth mode. (C) 2015 Elsevier Ltd. All rights reserved.
机译:用NH3等离子体修饰Si衬底上的催化Ni膜,然后通过等离子体增强化学气相沉积法在Ni膜上生长碳纳米管(CNT)。考察了NH3改性能力与CNT的生长有关的影响。随着修饰功率增加到20 W以上,Ni膜的结构相从纯Ni演变为硅化Ni(Si-Si)相。由于高能离子轰击,Ni和Si的相互扩散可以解释这一点,这导致在Si衬底上形成Ni-Si层。另外,在形成Ni-Si相之后,所生长的CNT的生长模式从顶部生长模式改变为基本生长模式。这表明Ni-Si层比Ni层更牢固地粘附到Si衬底上,并且Ni-Si层的形成导致CNT生长模式的改变。 (C)2015 Elsevier Ltd.保留所有权利。

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