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Growth method for vertically aligned carbon nanotubes by changing the morphologies of a transition metal thin films

机译:通过改变过渡金属薄膜的形态垂直取向的碳纳米管的生长方法

摘要

The present invention describes a diameter of the CNT is grown in a vertical, density and metastases in a length adjustable at will by the surface shape of the metal thin film to control the carbon nanotube growth method by controlling the surface shape of the transition metal thin film. The method comprising the transition vertical growth process of carbon nanotubes by metal thin-film formation control according to the present invention includes (a) depositing a transition metal thin film on the substrate while controlling the shape and size of crystals in the desired size and shape to be formed; And a; and (b) growing carbon nanotubes on the transition metal thin film the deposited. First, the (a) substrate preparation method of the step is usually the case of using a sputter controlling the sputtering power density was changed, or the deposition temperature or the heat treatment temperature to adjust the grain size and density of Ni, Co, Fe or their mixtures. Next, the (B) step of the synthesis the deposition of the carbon nanotubes is methane gas, acetylene gas as a silicon substrate or a glass substrate moved a transition metal thin film deposited over in the reactor a plasma chemical vapor deposition or thermal chemical vapor deposition method, an ethylene gas, propane gas, etc. of by flowing within the hydrocarbon gas into the reaction, thereby growing the carbon nanotubes on the catalytic metal film.
机译:本发明描述了碳纳米管的直径沿垂直方向生长,密度和转移长度,其长度可通过金属薄膜的表面形状任意调节,以通过控制过渡金属薄膜的表面形状来控制碳纳米管生长方法。电影。根据本发明的包括通过金属薄膜形成控制的碳纳米管的过渡垂直生长过程的方法,包括:(a)在衬底上沉积过渡金属薄膜,同时将晶体的形状和尺寸控制在期望的尺寸和形状。形成;还有一个(b)在沉积的过渡金属薄膜上生长碳纳米管。首先,该步骤的(a)衬底制备方法通常是使用溅射控制溅射功率密度或改变沉积温度或热处理温度来调节Ni,Co,Fe的晶粒尺寸和密度的情况。或其混合物。接下来,在合成的(B)步骤中,碳纳米管的沉积是甲烷气体,作为硅衬底或玻璃衬底的乙炔气,将过渡金属薄膜移至反应器中沉积的等离子体化学气相沉积或热化学气相沉积。沉积方法中,通过使乙烯气体,丙烷气体等在烃类气体中流动而进入反应,从而在催化金属膜上生长碳纳米管。

著录项

  • 公开/公告号KR100513713B1

    专利类型

  • 公开/公告日2005-09-07

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20000025333

  • 申请日2000-05-12

  • 分类号H01L21/20;

  • 国家 KR

  • 入库时间 2022-08-21 22:03:24

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