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Atomic and electronic structures of boron nitride nanohorns studied by high-resolution electron microscopy and molecular orbital calculations

机译:高分辨率电子显微镜和分子轨道计算研究氮化硼纳米角的原子和电子结构

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摘要

Boron nitride (BN) nanohoms with various tip angles were synthesized by an arc-melting method, and atomic structure models for BN nanohoms were proposed from high-resolution electron microscopy. Stability and electronic structures of the BN nanohoms were investigated by molecular orbital/mechanics calculations, which indicated that multi-walled BN nanohoms would be stabilized by stacking of BN nanohoms. The energy gaps of the BN nanohoms were calculated to be 0.20 approx 0.85 eV, which are lower compared to those of BN clusters and nanotubes.
机译:通过电弧熔化法合成了具有不同尖端角的氮化硼(BN)纳米,,并通过高分辨率电子显微镜提出了用于氮化硼(BN)纳米hom的原子结构模型。通过分子轨道/力学计算研究了BN纳米hom的稳定性和电子结构,这表明通过堆叠BN纳米hom可以稳定多壁BN纳米hom。 BN纳米nano的能隙经计算为0.20约0.85 eV,比BN簇和纳米管的能隙低。

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