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Identification of nitrogen decorated vacancies in CVD diamond films using positron annihilation coincidenceDoppier broadening spectroscopy

机译:用正电子an没巧合确定CVD金刚石膜中氮修饰的空位多普尔展宽光谱

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Coincidence Doppier broadening studies (CDB) have been carried out on CVD diamond films. The coincidence Doppler broadened spectra are analyzed to obtain information about the chemical surroundings at the annihilation site. Remarkably large fraction of positrons are seen to annihilate with the nitrogen present as impurity in low concentration. Complementary positron lifetime (LTS) measurements indicate Saturation trapping of positrons, primarily in monovacancies and vacancy clusters. The information obtained from CDB and LTS studies provides direct observation of nitrogen decorated vacancies or nitrogen vacancy complexes in diamond film. Our results highlight the Potential of CDB technique in characterizing impurity precipitates and impurity vacancy complexes in diamond.
机译:对CVD金刚石薄膜进行了巧合多普勒展宽研究(CDB)。分析同时发生的多普勒加宽光谱,以获得有关hil灭地点化学环境的信息。可见很大一部分正电子会ron灭,氮以低浓度杂质形式存在。互补正电子寿命(LTS)测量表明,正电子的饱和陷阱主要存在于单空位和空位簇中。从CDB和LTS研究获得的信息可直接观察金刚石膜中氮修饰的空位或氮空位络合物。我们的结果强调了CDB技术在表征金刚石中的杂质沉淀和杂质空位络合物方面的潜力。

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