Homoepitaxial single crystal diamond growth at different gas pressures and MPACVD reactor configurations

摘要

Homoepitaxial growth of single crystal diamond by microwave plasma chemical vapor deposition in a 2.45 GHz reactor was investigated at high microwave power density varied from 80 W/cm~3 to 200 W/cm~3. Two methods of achieving high microwave power densities were used (1) working at relatively high gas pressures without local increase of electric field and (2) using local increase of electric field by changing the reactor geometry (substrate holder configuration) at moderate gas pressures. The CVD diamond layers with thickness of 100-300mu m were deposited in H2-CH4 gas mixture varying methane concentration, gas pressure and substrate temperature. The (100) HPHT single crystal diamond seeds 2.5 × 2.5 × 0.3 mm (type Ib) were used as substrates. The high microwave power density conditions allowed the achievement of the growth rate of high quality single crystal diamond up to 20 mu m/h. Differences in single crystal diamond growth at the same microwave power density 200 W/cm~3 for two process conditions-gas pressure 210Torr (fiat holder) and 145 Torr (trapezoid holder)-were studied. For understanding of growth process measurements of the gas temperature and the concentration of atomic hydrogen in plasma were made.