Growth of silicon carbide surface nanocrystals on silicon under high-temperature vacuum annealing

摘要

The formation and subsequent time-evolution of silicon carbide nanocrystals grown on a silicon surface by high-temperature vacuum annealing was investigated, with the effects of carbon contamination on the properties of these nanostructures being examined. The presence of higher contaminant levels during an annealing step was found to strongly enhance the nanocrystal growth rate, yet conversely to have no effect upon the density of nanocrystals which nucleated on the silicon surface. The physical structure of these objects was then studied in detail using high-resolution imaging and surface analysis techniques.