Impact of layer thickness and light transmission of ZnO nanomaterials on GaN-based light emitting diodes

摘要

Highly transparent ZnO nanomaterials have been successfully dispersed in the form of nanoparticles and nanorods on InGaN/GaN-based surface mounted light emitting diodes (SM-LEDs). An effortless spin-coating technique is employed to disperse the ZnO nanoparticle layers, and a well-known hydrothermal technique is used for growing the ZnO nanorods. The layer thickness and the light transmission at a specific wavelength are the major factors in improving the light output power of the devices. Field emission scanning electron microscope (FESEM) images are used to confirm the uniform dispersion of the ZnO nanostructures on the top of the SM-LEDs. The layer thickness and the level of light transmission at 460 nm are examined from the cross-sectional FESEM images and UV absorption spectra, respectively.