Two-step growth of HFCVD diamond films over large areas

摘要

This paper reports the results of a two-step hot filament chemical vapor deposition method to improve the quality of diamond films. Diamond films were deposited on a Si(100) substrate having an area of 45 cm(2) and a thickness of 60 mu m. employing a HFCVD system. The first step is the growth of CVD diamond in the HFCVD reactor. In the second step, the samples were treated in a saturated solution of H2SO4:CrO3 and rinsed in a (1:1) solution of H2O2: NH4OH. After this procedure, a second diamond layer was deposited. The diamond films were analyzed by raman scattering spectroscopy (RSS). scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). The films showed a high degree of purity with a thickness of 60 mu m, presenting uniform characteristics over a large area.