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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Synthesis and characterization of BN thin films prepared by plasma MOCVD with organoboron precursors
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Synthesis and characterization of BN thin films prepared by plasma MOCVD with organoboron precursors

机译:有机硼前驱体等离子体MOCVD制备BN薄膜的合成与表征

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摘要

Boron nitride (BN) films have contributed to improvement of tribological parts. For this study, we prepared films using plasma MOCVD with an organoborate precursor and investigated the mechanical properties and structure of BN films. The BN films were formed on specimens of silicon wafers and tungsten carbide (WC) substrates at low temperatures of less than 500 degrees C. Hardness tests were carried out to evaluate mechanical properties of BN films. The structure of BN films was investigated using XRD, Raman, and FT-IR spectra. (C) 2008 Elsevier Ltd. All rights reserved.
机译:氮化硼(BN)薄膜有助于改善摩擦部件。对于本研究,我们使用带有有机硼酸酯前体的等离子体MOCVD制备了薄膜,并研究了BN薄膜的机械性能和结构。在小于500摄氏度的低温下,在硅片和碳化钨(WC)基板的样品上形成BN膜。进行了硬度测试以评估BN膜的机械性能。使用XRD,拉曼和FT-IR光谱研究了BN膜的结构。 (C)2008 Elsevier Ltd.保留所有权利。

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