Silicon selective growth on partially oxidized substrate by ECR plasma CVD technique

摘要

The selective etching of Si by H{sub}2 plasma excited by the ECR technique was investigated. A high etch rate of 20 nm/min was obtained for Si and a complete selective etching for SiO{sub}2 was accomplished. Selective Si growth was realized on SiO{sub}2 line and space patterned substrates.