Angular dependences of surface composition, sputtering and ripple formation on silicon under N{sup}+{sub}2 ion bombardment

摘要

The correlation between angular dependences of surface composition and sputtering yield of Si by (N{sub}2){sup}+ ions was found. It may explain anamalous (in comparison to Ai ion bombardment on Si) sharp increasing of sputtering yield at angles of ion incidence over 30°. Angular range of ripple formation on Si surface bombarded by 1.5-9 keV (N{sub}2){sup}+ ions was measured. It belongs to the interval of angles of ion incidence where heterogeneity of surface layers and pronounced changes of sputtering were observed.