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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Is there a way to improve the uniformity of TiN deposition conditions in large pulsed d. c. plasma CVD reactors?
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Is there a way to improve the uniformity of TiN deposition conditions in large pulsed d. c. plasma CVD reactors?

机译:有没有一种方法可以改善大脉冲d中TiN沉积条件的均匀性。 C。等离子CVD反应器?

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摘要

Recent investigations of the dynamics of pulsed direct-current discharges relevant for the production of titanium nitride coatings by plasma-assisted chemical vapor deposition in large reactors have shown that,when titanium tetrachloride is used as a feed stock gas, the spreading of the discharge is slow, reaching some parts of the reactor with substantial delay. The result is a non-uniform plasma power density in front of the substrates as well as a spatially varying exposure time of the surface to the plasma. These problems can be solved by measures, which increase the conductivity of the plasma at the beginning of the pulses. One way to achieve this goal is the use of synchronized additional short high-voltage pulses. The present study investigates the dependence of the evolution of the discharge on parameters of the additional short high-voltage pulses.
机译:最近对在大型反应器中通过等离子体辅助化学气相沉积生产氮化钛涂层相关的脉冲直流放电动力学的研究表明,当四氯化钛用作原料气时,放电的扩散为速度慢,到达反应堆的某些部分会有很大的延迟。结果是基板前部的等离子体功率密度不均匀,以及表面在等离子体中的暴露时间在空间上变化。这些问题可以通过措施来解决,这些措施可以在脉冲开始时增加等离子体的电导率。实现此目标的一种方法是使用同步的附加短高压脉冲。本研究调查了放电的发展对额外的短高压脉冲参数的依赖性。

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