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首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Crystal growth of epitaxially grown PbTiO{sub}3 thin films on miscut SrTiO{sub}3 substrate
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Crystal growth of epitaxially grown PbTiO{sub}3 thin films on miscut SrTiO{sub}3 substrate

机译:外延生长的PbTiO {sub} 3薄膜在错切SrTiO {sub} 3衬底上的晶体生长

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摘要

Thin films of (001)PbTiO{sub}3 (PT), 5-260 nm thickness, were grown by sputtering on miscut (001)SrTiO{sub}3 (ST) substrate with miscut angle of 1.7° at 600℃. Although the sputtered PT thin films were deformed by the two dimensional compressiveforce due to the small lattice of ST substrate and showed large tetragonality of c/a = 1.7 at RT, i.e. c/a= 1.06 for bulk PT, the PT thin films showed a single domain-single crystal perovskite structure through a large area with extremely smooth surfaceon an atomic scale. The film growth was governed by a step-flow model showing a layer growth. It was found that the layer growth was stable at low oxygen partial pressure during the sputtering deposition.
机译:在600℃下,通过在误切角度为1.7°的误切(001)SrTiO {sub} 3(ST)衬底上溅射溅射厚度为5-260 nm的(001)PbTiO {sub} 3(PT)薄膜。尽管溅射的PT薄膜由于ST基板的晶格小而受到二维压缩力的作用而变形,并且在室温下显示出大的c / a = 1.7的四边形,即大体积PT的c / a = 1.06,但是PT薄膜显示出单畴单晶钙钛矿结构,在原子尺度上具有极大的光滑表面。膜的生长由显示层生长的逐步流动模型控制。发现在溅射沉积期间在低氧分压下层生长稳定。

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