10]/Si [010]. The SrTiO3/Si interface is epitaxially crystallized without any amorphous oxide layer. The formation of a coincident site lattice at the interface between Si and a Sr-silicate and/or STO helps to stabilize STO in the epitaxial orientation. The invention can be applied to epitaxial template and barrier for the integration of many other functional oxide materials on silicon. In particular, the (110)-oriented STO structure is useful for practical applications such as the preparation of ferroelectric-insulator-semiconductor devices as well as providing a broad solution to the generic problem of polarity discontinuities at perovskite heterointerfaces."/>
公开/公告号US7718516B2
专利类型
公开/公告日2010-05-18
原文格式PDF
申请/专利权人 JIANHUA HAO;JU GAO;
申请/专利号US20070690188
发明设计人 JU GAO;JIANHUA HAO;
申请日2007-03-23
分类号H01L21/20;H01L21/36;
国家 US
入库时间 2022-08-21 18:51:08