Method For Epitaxial Growth Of (110)-Oriented Srtio3 Thin Films On Silicon Without Template

摘要

A Process And Structure Utilizes Pulsed Laser Deposition Technique To Grow Srtio3 (Sto) Films With Single (110) Out-Of-Plane Orientation Upon A Surface Of All (100), (110) And (111)-Oriented Silicon (Si) Substrates. No Designed Buffer Layer Is Needed Beneath The Sto Thin Films. The In-Plane Alignments For The Epitaxial Sto Films Grown Directly On Si (100) Are As Sto [001]//Si [001] And Sto [1 10]/Si [010]. The Srtio3/Si Interface Is Epitaxially Crystallized Without Any Amorphous Oxide Layer. The Formation Of A Coincident Site Lattice At The Interface Between Si And A Sr-Silicate And/Or Sto Helps To Stabilize Sto In The Epitaxial Orientation. The Invention Can Be Applied To Epitaxial Template And Barrier For The Integration Of Many Other Functional Oxide Materials On Silicon.; In Particular, The (110)-Oriented Sto Structure Is Useful For Practical Applications Such As The Preparation Of Ferroelectric-Insulator-Semiconductor Devices As Well As Providing A Broad Solution To The Generic Problem Of Polarity Discontinuities At Perovskite Heterointerfaces.