Ultra-thin silicon-oxide films by sputter-deposition and their application to high-quality poly-Si TFTS

摘要

This paper. describes ultra-thin high-quality silicon oxide (SiO{sub}2) films deposited at low temperature by sputtering from a SiO{sub}2 target in an oxygen-argon mixture. SiO{sub}2 films up to a thickness of 6.5 nm are successfully formed onpolycrystalline silicon (poly- Si) films which have a surface roughness of several nanometers. The SiO{sub}2 films show electrical properties with a sufficiently high breakdown voltage and low leakage current which are comparable with the electricalproperties of the thermally grown SiO{sub}2 film on single-crystalline Si at high temperature. Moreover, both n- and p-channel polycrystalline silicon thin film transistors (poly-Si TFTs) with ultra-thin sputtered SiO{sub}2 films show excellentcharacteristics.