首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Development and test of 2.45 GHz microwave ion source based intense ion beam experimental facility
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Development and test of 2.45 GHz microwave ion source based intense ion beam experimental facility

机译:基于2.45 GHz微波离子源的强离子束实验设备的开发和测试

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An intense low energy ion beam facility has been designed, developed at Inter University Accelerator Centre (ILIAC), New Delhi. This facility comprises of a 2.45 GHz microwave ion source, multi-electrode extraction system and an experimental chamber. The facility was designed to perform experiments using intense ion beams having energy in range of a few keV to a few tens of key. The plasma chamber was designed keeping two additional ports for plasma diagnostics. In order to deliver intense ion beams on the target with low electric field, a four-electrode extraction system has been developed. This facility has been used for 10 keV N+ & O+ ion implantation in silicon at varying doses. The implanted samples have been characterized by using Rutherford Back Scattering (RBS), RBS Channeling (RBS-C) and Nuclear Resonance Analysis (NRA). (C) 2015 Elsevier Ltd. All rights reserved.
机译:在新德里的国际大学加速器中心(ILIAC)设计和开发了一种强大的低能量离子束设备。该设施包括一个2.45 GHz微波离子源,多电极提取系统和一个实验箱。该设备旨在使用能量在几keV到几十个键的范围内的强离子束进行实验。血浆室的设计保留了两个额外的端口,用于进行血浆诊断。为了用低电场在目标上传递强离子束,已经开发了一种四电极提取系统。该设备已用于不同剂量的硅中的10 keV N +和O +离子注入。通过使用Rutherford反向散射(RBS),RBS通道(RBS-C)和核共振分析(NRA)表征了植入的样品。 (C)2015 Elsevier Ltd.保留所有权利。

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