首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Effects of methane flow rate on the optical properties and chemical bonding of germanium carbon films deposited by reactive sputtering
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Effects of methane flow rate on the optical properties and chemical bonding of germanium carbon films deposited by reactive sputtering

机译:甲烷流速对反应溅射沉积锗碳薄膜光学性能和化学键合的影响

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摘要

Amorphous hydrogenated germanium carbon (a-Ge_(1-x)C_x:H) films were prepared by radio frequency (RF) reactive magnetron sputtering of a pure Ge (111) target in a CH_4 + H_2+Ar mixture and their composition, optical properties, chemical bonding were investigated as a function of gas flow rate ratio of CH_4/(Ar + H_2). The results showed that the deposition rate first increased and then decreased as gas flow rate ratio of CH_4/(Ar + H_2) was increased from 0.125 to 0.625. And the optical gap of the a-Ge_(1-x)C_x:H films increased from 1.1 to 1.58 eV accompanied with the increase in the carbon content and the decrease in the relative content of Ge-C bonds of the films as the CH_4 flow rate ratio was increased, while refractive index of the films decreased and the absorption edge shifted to high energy. Through the analysis of X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy, it was found that the formation of Ge-C bonds in the films was promoted by low CH_4 flow rate which is connected with relatively high H_2 concentration and Ge content. Especially in low CH_4 concentration, the formation of sp ~2-hybridised C-C bonds was suppressed considerably both due to the etching effect on weak bonds of H and the fact that chemical bonding for germanium can be only sp~3 hybridization.
机译:通过对CH_4 + H_2 + Ar混合物中的纯Ge(111)靶进行射频(RF)反应磁控溅射和其组成,光学组成,制备非晶态氢化锗碳(a-Ge_(1-x)C_x:H)膜研究了气体性质,化学键合与气体流速比CH_4 /(Ar + H_2)的关系。结果表明,随着CH_4 /(Ar + H_2)的气体流量比从0.125增加到0.625,沉积速率先增加后降低。 a-Ge_(1-x)C_x:H薄膜的光学间隙从1.1增加到1.58 eV,伴随着碳含量的增加和Ge-C键相对含量的减少(CH_4)流速比增加,而膜的折射率降低,吸收边移至高能。通过对X射线光电子能谱(XPS),傅立叶变换红外光谱(FTIR)和拉曼光谱的分析,发现低CH_4流速促进了薄膜中Ge-C键的形成。高H_2浓度和Ge含量。特别是在低CH_4浓度下,由于对H的弱键的蚀刻作用以及锗的化学键仅能通过sp〜3杂交的事实,sp〜2-杂化的C-C键的形成受到了显着抑制。

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