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Principal Factors Affecting the Sub-Micrometer Grooving Mechanism of SiC Thin Layers by a 355 nm UV Laser

机译:355 nm紫外激光影响SiC薄膜亚微米开槽机理的主要因素

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摘要

The machining of micro holes and grooves on single crystal SiC thin layers by a UV laser (355 nm wave length and 15 ps pulse width) is reported. It was verified that an optimum threshold, where both laser sublimation and photonic ablation can take place at the same time in order to obtain a micro sharp groove as 2 μm pitch and 0.4 μm depth, must be selected. Theoretically, laser photonic ablation may take place at a certain amount of laser fluence, and then SiC is sublimed once the influence exceeds another limit, and therefore, there is an optimum threshold between these two limits of laser fluence.
机译:据报道,通过紫外激光(355 nm波长和15 ps脉冲宽度)在单晶SiC薄层上加工微孔和凹槽。业已证实,必须选择最佳阈值,在该阈值下可以同时进行激光升华和光子烧蚀,以获得间距为2μm,深度为0.4μm的微尖槽。从理论上讲,激光光子烧蚀可以在一定的激光能量密度下发生,一旦影响超过另一个极限,SiC就会升华,因此,在这两个激光能量密度极限之间存在一个最佳阈值。

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