首页> 外文期刊>Zeitschrift fur Naturforschung, B. A Journal of Chemical Sciences >Supersilylsilane R*SiX3: Conversion into disilanes R*X2Si-SiX2R*, silylenes R*XSi, cyclosilanes (R*XSi)(n), disilenes R*XSi=SiXR*, tetrasupersilyl-tetrahedro-tetrasilane [German]
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Supersilylsilane R*SiX3: Conversion into disilanes R*X2Si-SiX2R*, silylenes R*XSi, cyclosilanes (R*XSi)(n), disilenes R*XSi=SiXR*, tetrasupersilyl-tetrahedro-tetrasilane [German]

机译:超甲硅烷基硅烷R * SiX3:转化为乙硅烷R * X2Si-SiX2R *,甲硅烷基R * XSi,环硅烷(R * XSi)(n),二烯R * XSi = SiXR *,四超甲硅烷基-四杂-四硅烷[德语]

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摘要

Supersilylmonohalosilanes R*RSiHCl (R* = Supersilyl = SitBu(3)) react with Na in C6H6 at 65 degrees C or with NaC10H8 in THF at -78 degrees C with formation of disupersilyldisilanes R*RWSi-SiHRR* in quantitative (R = H, Me) or moderate yields (R = Ph). In the latter case, R*PhSiH2 is obtained additionally at 65 degrees C (exclusively with Na in THF at 65 degrees C). Obviously the supersilylsilanides NaSiHRR* are generated as intermediates which react with cducts R*RSiHCl with NaCl elimination and formation of R*RHSi-SiHRR* (R = H, Me) or R*RSiH2 and R*RSi (R = Ph). The silylene intermediate R*PhSi inserts into the SiH-bonds of the educt R*PhSiHCl and of the product R*PhSiH2 with formation of the disupersilyldisilanes R*PhSiH-SiClPhR* and R*PhSiH-SiHPhR* which are reduced by Na at 65 degrees C to R*PhSiH2 (and by NaC10H8 at low temperatures to give R*PhSiH-SiHPhR*). The addition of NaR* to R*RSiWCl in THF at low temperatures leads with NaCl elimination to R*2RSiH (R = H, Me) or to R*RHSi-SiHRR* (R = Me) besides R*Cl, or to R*RHSi-SiClRR* (R = Ph) besides R*H and NaR. whereas the addition of R*PhSiHCl to NaR* in TIFF at low temperatures results in the formation of NaSiPhR*(2) besides R*H and NaCl. In the latter cases (R = Ph), NaR* react with R*PhSiHCl to release the silylene R*PhSi, the: transistory existence of which could be proven by trapping it with Et3SiH (formation of R*Ph(Et3Si)-SiH). Subsequently, R*PhSi inserts into the SiH bond of R*PhSiHCl (addition of NaR* to R*PhSiHCl) or into the NaSi bond of NaR* (addition of R*PhSiHCl to NaR*). - Surpersilyldihalosilanes R*SiHCl2 are converted by Mg in C6H6 at 65 degrees C into cyclosilanes (R*SiH)(n) (n = 3, 4) and R*PhSiBrCl by Na at low temperatures - via the silylene R*PhSi - into the disilene R*PhSi=SiPhR*. which is reduced by excess Na to an anion radical. - Supersilyldihalosilanes R*SiBr2Cl2 R*SiBr3 and R*SiI3 react with Na, NaC10H8 or NaR* in THF with formation of tetrasupersilyl-tetrahedro-tetrasilane (R*Si)(4) in quantitative yields, whereas the reactions of C*SiCl3 with LiC10H8 in THF at 45 degrees C lead to (R*Si)(4) only in moderate yields. Obviously, the tetrahedrane is formed from R*SiHal(3) via R*SiHal(2)Na and R*NalSi=SiHalR* as reaction intermediates. The results lead to the following conclusions: (i) Silylenes play a role in dehalogenation of "sterically overloaded" supersilylhalosilanes R*R3-n-SiPHal(n). - (ii) A straight-forward procedure for a high-yield synthesis of (R*Si)(4) from easily available educts consists in supersilanidation of SiH2Cl2 with NaR*, bromination of the formed supersilylsilane R*SiH2Cl with Br-2 and dehalogenation of the bromination product R*SiBr2Cl with Na. [References: 25]
机译:超甲硅烷基单卤硅烷R * RSiHCl(R * =超级甲硅烷基= SitBu(3))在65摄氏度下与C6H6中的Na或在-78摄氏度下与THF中的NaC10H8反应,形成定量的二超甲硅烷基二硅烷R * RWSi-SiHRR *(R = H ,Me)或中等产量(R = Ph)。在后一种情况下,R * PhSiH2额外在65摄氏度下获得(仅在Na的THF中在65摄氏度下获得)。显然,超硅烷基硅烷化物NaSiHRR *是作为中间体与R * RSiHCl发生反应而消除了NaCl,形成了R * RHSi-SiHRR *(R = H,Me)或R * RSiH2和R * RSi(R = Ph)。亚甲硅中间体R * PhSi插入离析物R * PhSiHCl和产物R * PhSiH2的SiH键中,形成二超甲硅烷基乙硅烷R * PhSiH-SiClPhR *和R * PhSiH-SiHPhR *,它们在65℃下被Na还原℃至R * PhSiH2(在低温下通过NaC10H8得到R * PhSiH-SiHPhR *)。在低温下在THF中在R * RSiWCl中添加NaR *导致NaCl消除,除R * Cl或R以外,R * 2RSiH(R = H,Me)或R * RHSi-SiHRR *(R = Me)除了R * H和NaR之外,* RHSi-SiClRR *(R = Ph)。而在低温下,在TIFF中向NaR *中添加R * PhSiHCl会导致除R * H和NaCl之外形成NaSiPhR *(2)。在后一种情况下(R = Ph),NaR *与R * PhSiHCl反应释放出甲硅烷基R * PhSi,可以通过用Et3SiH捕获它来证明其晶体管存在(R * Ph(Et3Si)-SiH的形成)。随后,R * PhSi插入R * PhSiHCl的SiH键(将NaR *添加到R * PhSiHCl)或插入NaR *的NaSi键(将R * PhSiHCl添加到NaR *)。 -甲硅烷基二卤硅烷R * SiHCl2在65°C下通过C6H6中的Mg在低温下被Na转化为环硅烷(R * SiH)(n)(n = 3、4)和R * PhSiBrCl,通过甲硅烷基R * PhSi-转化为二烯R * PhSi = SiPhR *。被过量的Na还原成阴离子自由基。 -超甲硅烷基二卤硅烷R * SiBr2Cl2 R * SiBr3和R * SiI3在THF中与Na,NaC10H8或NaR *反应,形成定量的四超甲硅烷基-四杂-四硅烷(R * Si)(4),而C * SiCl3与LiC10H8在THF中在45摄氏度下仅以中等收率得到(R * Si)(4)。显然,四面体是由R * SiHal(3)经由R * SiHal(2)Na和R * NalSi = SiHalR *作为反应中间体而形成的。结果得出以下结论:(i)甲硅烷基在“空间超载”的超甲硅烷基卤硅烷R * R3-n-SiPHal(n)的脱卤作用中起作用。 -(ii)从容易获得的离析物中高产率合成(R * Si)(4)的简便方法包括SiH2Cl2与NaR *的超硅化,溴化形成的超硅烷基R * SiH2Cl与Br-2的溴化和溴化产物R * SiBr2Cl用Na脱卤。 [参考:25]

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