Efficient 974 nm emission through up-conversion in ErxYb2−xSi2O7 thin films for Si solar cells

摘要

Erbium-ytterbium disilicate films were grown on SiO2/Si substrate by magnetron sputtering method. Intense 974 nm emission was observed in the ErxYb2-xSi2O7 films by room temperature photoluminescence tests. The 974 nm emission was mainly from the transition 2F7/2 to 2F5/2 level of Yb3+ upon exploring energy-transfer via up-conversion (ETU) at Er3+ 4I13/2 level. The ETU process at Er3+ 4I13/2 level was studied in detail.