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首页> 外文期刊>Journal of Organometallic Chemistry >Disilienes R*XSi=SiXR* (R* = SitBu(3)) with silicon-bound H and Hal-Atoms X: Formation, isomerization, reactions [German]
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Disilienes R*XSi=SiXR* (R* = SitBu(3)) with silicon-bound H and Hal-Atoms X: Formation, isomerization, reactions [German]

机译:具有硅键合的H和Hal原子X的二硅烯R * XSi = SiXR *(R * = SitBu(3))X:形成,异构化,反应[德语]

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摘要

Dehalogenations of 1,2-disupersilyldisilanes R*H2Si-SiHalHR*, R*HHalSi-SiHalHR*, R*HHalSi-SiHal(2)R* and R*Hal(2)Si-SiHal(2)R* in THF with equimolar amounts of supersilyl sodium NaR* (R* = SitBu(3) = Supersilyl) lead slowly at room temperature (Hal = Cl) or fast even at - 78 degreesC (Hal = Br, I) under exchange of one halogen Hal for sodium Na to yellow-orange disilanides R*H2Si-SiNaHR*, R*HHalSi-SiNaHR*, R*HHalSi-SiNaHalR* and R*Hal(2)Si-SiNaHalR* (identification by protonation, methylation, silylation). These then, in the latter three cases, eliminate NaHal under formation of trans-1,2-disupersilyldisilenes R*XSi=SiXR* with silicon-bound H and Hal atoms as X. Actually produced are R*HSi=SiHR*, R*HSi=SiBrR*, R*ClSi=SiClR*, R*BrSi=SiBrR* and R*ISi=SiIR*. The intermediate existence of the disilenes could be proved by trapping them with diphenylacetylene (formation of [2 + 2] cycloadducts), with anthracene (formation of [4 + 2] cycloadducts), with benzophenone (formation of [2 + 2] cycloadducts), and/or with 2.3-dimethylbutadiene (formation of [2 + 2] and [4 + 2] cycloadducts as well as ene reaction products). Obviously, isomerization of the disilenes R*HalSi=SiHalR* to silylenes R*Hal(2)Si-SiR* is possible, the latter of which may be trapped by Et3SiH. In the absence of the mentioned traps, R*HSi=SiHR* thermolizes under formation of cyclotrisilanes R-3*Si3H3 and R-3*Si3H2R with R = SiH2R* as well as cyclotetrasilanes R-4*XSi4H4, whereas R*HSi=SiBrR* and R*BrSi=SiBrR* react to an unidentified mixture of substances. The disilene R*ClSi=SiClR* forms in the presence of its source R*Cl2Si=SiNaClR* cyclotetrasilanes R-4*Si4Cl4 obviously by way of insertion into the SiNa bond of the latter followed by elimination of NaCl. Finally, R*ISi=SiIR* goes over into the cyclotrisilane R-3*Si3I2R with R = SiI2R*, the formation of which could take place by way of [2 + 1] cycloaddition of the mentioned disilene and its isomer R*I2Si-SiR*. In the presence of NaR*, the disilene R*HSi=SiBrR* forms endo,exo- and endo,endo-bicyclotetrasilanes R-4*Si4H2. Thereby, at room temperature the pure endo,endo isomer slowly transforms into an equilibrium mixture of the endo,endo and the endo,exo isomer in the mole ratio of 1:9 (the reactions of R-4*Si4H2 with I-2 lead to cyclotrisilanes R-3*Si3HIR with R = SiHIR* and cyclotetrasilanes R-4*Si4H2I2). On the other hand, the disilenes R*HalSi=SiHalR* (Hal = Cl, Br, I) in the presence of NaR* quantitatively transform, possibly via the disilenides R*HalSi=SiNaR* and cyclotetrasilenes R-4*Si(4)Hal(2), into the tetrahedrotetrasilane R-4*Si-4 (the tetrahedrane reacts with O-2: I-2, Na under formation of R-4*Si4O2, R-4*Si4I2, R-4*Si4Na2). X-ray structure analyses are presented for cis,cis,trans-R-4*Si4H2I2 as well as cis,trans,cis-R-4*Si4Cl4 and the [2 + 2] cycloadducts of R*BrSi=SiBrR* with Ph2C=O and of R*ClSi=SiClR* with CH2=CMe-CMe=H-2. (C) 2001 Elsevier Science B.V. All rights reserved. [References: 38]
机译:等摩尔的1,2-二超甲硅烷基乙硅烷R * H2Si-SiHalHR *,R * HHalS​​i-SiHalHR *,R * HHalS​​i-SiHal(2)R *和R * Hal(2)Si-SiHal(2)R *的脱卤量的超级甲硅烷基钠NaR *(R * = SitBu(3)=超级甲硅烷基)在室温下(Hal = Cl)缓慢导引,甚至在-78摄氏度(Hal = Br,I)下快速导引,仅用一种卤素Hal交换钠Na到橙黄色二硅化物R * H2Si-SiNaHR *,R * HHalS​​i-SiNaHR *,R * HHalS​​i-SiNaHalR *和R * Hal(2)Si-SiNaHalR *(通过质子化,甲基化,甲硅烷基化鉴定)。然后,在后三种情况下,这些化合物在形成反式1,2-二超甲硅烷基二硅酮R * XSi = SiXR *且与硅键合的H和Hal原子为X的情况下消除NaHal。实际生成的是R * HSi = SiHR *,R * HSi = SiBrR *,R * ClSi = SiClR *,R * BrSi = SiBrR *和R * ISi = SiIR *。可以通过用二苯乙炔([2 + 2]环加合物的形成),蒽([4 + 2]环加合物的形成)和二苯甲酮([2 + 2]环加合物的形成)捕获二烯的中间存在。和/或2.3-二甲基丁二烯([2 + 2]和[4 + 2]环加合物的形成以及烯类反应产物)。显然,二烯R * HalSi = SiHalR *异构化为甲硅烷基R * Hal(2)Si-SiR *是可能的,后者可能被Et3SiH捕获。在没有上述陷阱的情况下,R * HSi = SiHR *在形成环三硅烷R-3 * Si3H3和R-3 * Si3H2R以及R = SiH2R *以及环四硅烷R-4 * XSi4H4的过程中发生热解,而R * HSi = SiBrR *和R * BrSi = SiBrR *与未知的物质混合物反应。在其源R * Cl2Si = SiNaClR *环四硅烷R-4 * Si4Cl4的存在下,二甲苯R * ClSi = SiClR *显然是通过插入后者的SiNa键中,然后消除NaCl的方式形成的。最后,R * ISi = SiIR *进入环三硅烷R-3 * Si3I2R,其中R = SiI2R *,其形成可以通过上述二烯及其异构体R * I2Si的[2 + 1]环加成发生-先生*。在NaR *存在下,二烯R * HSi = SiBrR *形成内,外和内,内-双环四硅烷R-4 * Si4H2。因此,在室温下,纯的内消旋异构体以摩尔比1:9缓慢转变为内消旋异构体和内消旋异构体的平衡混合物(R-4 * Si4H2与I-2铅的反应(R = SiHIR *的环三硅烷R-3 * Si3HIR和R-4 * Si4H2I2的环四硅烷)。另一方面,在存在NaR *的情况下,二烯R * HalSi = SiHalR *(Hal = Cl,Br,I)可能通过二烯R * HalSi = SiNaR *和环四硅烯R-4 * Si(4 Hal(2)进入四面四硅烷R-4 * Si-4(四面体与O-2:I-2,Na反应形成R-4 * Si4O2,R-4 * Si4I2,R-4 * Si4Na2 )。 X射线结构分析显示了顺式,顺式,反式-R-4 * Si4H2I2以及顺式,反式,顺式-R-4 * Si4Cl4和R * BrSi = SiBrR *与Ph2C的[2 + 2]环加成物= O且R * ClSi = SiClR * = CH,CH 2 = CMe-CMe = H-2。 (C)2001 Elsevier Science B.V.保留所有权利。 [参考:38]

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