Design of MEMS Tunable Inductor Implemented on SOI and Glass wafers Using Bonding Technology

摘要

In this work, RF- MEMS tunable inductor is designed based on mechanical displacement that changes the magnetic coupling coefficient between two inductors. The two inductors are separated by an air gap of 15 μm. The tunable inductor microstructure is based on the bonding technology of two wafers, the first one is SOI wafer etched through bulk micromachining and the other one is Quartz glass substrate. Modeling and analysis of the MEMS microstructure including the two inductors and the actuator are performed using Ansoft HFSS and Intellisuite simulators respectively. The proposed inductor has a maximum Q factor of 8.83 and a self resonance frequency of 25 GHZ. The inductance value is varied from 1.69 to 6.35 nH, resulting in a tuning range of 294%.