Ga+ Basicity and Affinity Scales Based on High-Level AbInitio Calculations

摘要

The structure, relative stability and bonding of complexes formed by the interaction between Ga+ and a large set of compounds, including hydrocarbons, aromatic systems, and oxygen-, nitrogen-, fluorine and sulfur-containing Lewis bases have been investigated through the use of the high-level composite ab initio Gaussian-4 theory. This allowed us to establish rather accurate Ga+ cation affinity (GaCA) and Ga+ cation basicity (GaCB) scales. The bonding analysis of the complexes under scrutiny shows that, even though one of the main ingredients of the Ga+-base interaction is electrostatic, it exhibits a non-negligible covalent character triggered by the presence of the low-lying empty 4p orbital of Ga+, which favors a charge donation from occupied orbitals of the base to the metal ion. This partial covalent character, also observed in AlCA scales, is behind the dissimilarities observed when GaCA are compared with Li+ cation affinities, where these covalent contributions are practically nonexistent. Quite unexpectedly, there are some dissimilarities between several Ga+-complexes and the corresponding Al+-analogues, mainly affecting the relative stability of -complexes involving aromatic compounds.