Composition of plasma-chemical silicon dioxide films as studied by IR spectroscopy

摘要

The results of a comparative analysis of the compositions of silicon dioxide films prepared by the decomposition of tetraethoxysilane vapor in a glow discharge and the deposition of the products onto a substrate are presented. The compositions of films prepared in gas mixtures containing argon, oxygen, tetraethoxysilane vapor, and NaCl were compared using IR spectroscopy. The electric discharge was excited at a frequency of 19 kHz and in a radiofrequency range at 81.36 MHz. It was found that the additives of oxygen and sodium-containing vapors exerted a noticeable effect on the composition of the films. The compositions of the films prepared at the low-frequency and high-frequency discharge excitation were also different.