Modeling Quantum Transport in Nanoscale Vertical SOI nMOSFET

摘要

The electron transports in micro-architecture semiconductor are simulated using vertical SOI hMOSFET with different models. Some details in transport can be presented by changing channel length, channel thickness and drain voltage. An interesting phenomenon similar to collimation effect in mesoscopic system is observed. This may suggest the quite intriguing possibility that scattering may open new channel in sufficiently narrow devices.