Influence of width of left well on intersubband transitions in AlxGa1-xN/GaN double quantum wells

摘要

Influence of width of left well in AlxGa1-x N/GaN double quantum wells (DQWs) on absorption coefficients and wavelengths of the intersubband transitions (ISBTs) is investigated by solving the Schrodinger and Poisson equations self-consistently. When the width of left well is 1.79 nm, three-energy-level DQWs are realized. The ISBT between the first odd and second odd order subbands (the 1(odd)-2(odd) ISBT) has a comparable absorption coefficient with the 1(odd)-2(even) ISBT. Their wavelengths are located at 1.3 and 1.55 mu m, respectively. When the width of left well is 1.48 nm, a four-energy-level DQWs is realized. The calculated results have a possible application to ultrafast two-colour optoelectronic devices operating within the optical communication wavelength range.