机译:极化对AlxGa1-xN / GaN多量子阱的子带间跃迁的影响
Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering,Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering,Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering,Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering,Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering,Huazhong University of Science and Technology, Wuhan 430074, China;
Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering,Huazhong University of Science and Technology, Wuhan 430074, China;
Jiangsu Key Laboratory of ASIC Design, Nantong University, Nantong 226019, China;