Investigation of SOI substrates incorporated with buried MOSi2 for high frequency SiGeHBTs

摘要

Highly arsenic-doped Si-on-insulator (SOI) substrate incorporated with buried MOSi2 layers is fabricated aiming at decreasing the collector series resistance of SiGe heterojunction bipolar transistors (HBTs) on SOI, thereby enhancing cutoff frequency (f(T)) performance and increasing the maximum value of f(T) (f(TMAX)). The f(T) performance at medium current is enhanced and current required for f(T) = 15 GHz is reduced by half. The value of f(TMAX) is improved by 30%.