6H-SiC Schottky barrier source/drain NMOSFET with field-induced source/drain extension

摘要

A novel SiC Schottky barrier source/drain NMOSFET (SiC SBSD-NMOSFET) with field-induced source/drain (FISD) extension is proposed and demonstrated by numerical simulation for the first time. In the new device the FISD extension is induced by a metal field-plate lying on top of the passivation oxide, and the width of Schottky barrier is controlled by the metal. field-plate. The new structure not only eliminates the effect of the sidewalls but also significantly improves the on-state current. Moreover, the performance of the present device exhibits very weak dependence on the widths of sidewalls.