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首页> 外文期刊>Wear: an International Journal on the Science and Technology of Friction, Lubrication and Wear >Effect of wear of diamond wire on surface morphology, roughness and subsurface damage of silicon wafers
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Effect of wear of diamond wire on surface morphology, roughness and subsurface damage of silicon wafers

机译:金刚石线的磨损对硅片表面形貌,粗糙度和亚表面损伤的影响

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摘要

Wear of fixed abrasive diamond wire affects the quality of sliced silicon wafers, necessitating replacement of the costly wire. This paper analyzes the effect of wire wear on the surface morphology, roughness, and subsurface damage of as-cut single crystal silicon wafers. Scanning electron microscopy, Raman spectroscopy, confocal microscopy, focused ion beam machining (FIB), and biaxial flexure are used to evaluate the surface morphology, areal surface roughness, and subsurface damage (cracks). Results show that, with increased wire wear, the wafers exhibit greater evidence of ductile removal, lower surface roughness, fewer but slightly deeper subsurface cracks, and lower average fracture strength. (C) 2016 Elsevier B.V. All rights reserved.
机译:固定的研磨金刚石线的磨损会影响切片的硅晶片的质量,因此必须更换昂贵的线。本文分析了导线磨损对切割后的单晶硅晶片的表面形态,粗糙度和次表面损伤的影响。扫描电子显微镜,拉曼光谱,共聚焦显微镜,聚焦离子束加工(FIB)和双轴挠曲用于评估表面形态,表面粗糙度和亚表面损伤(裂纹)。结果表明,随着线磨损的增加,晶圆表现出更大的延展性去除证据,较低的表面粗糙度,较少但略深的地下裂纹以及较低的平均断裂强度。 (C)2016 Elsevier B.V.保留所有权利。

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