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The use of camphor-grown carbon nanotube array as an efficient field emitter

机译:使用樟脑生长的碳纳米管阵列作为有效的场发射器

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摘要

Three-dimensional growth of well-aligned high-purity multiwall carbon nanotubes (CNTs) is achieved on silicon, nickel-coated silicon and cobalt-coated silicon substrates by thermal decomposition of a botanical carbon source, camphor, with different catalyst concentrations. Field emission study of as-grown nanotubes in a parallel-plate diode configuration suggests them to be an efficient emitter with a turn-on field of approx 1 V/mu m (for 10 mu A/cm~2) and a threshold field of approx 4 V/mum (for 10 mA/cm~2). Maximum current density lies in a range of 20-30 mA/cm~2 at 5.6 V/mu m with significant reversibility. Prolonged stability test of camphor-grown CNT emitters suggests a life time of approx 5 months under continuous operation. A new feature, metal-assisted electron emission from CNTs, has been addressed. Isolated nano-tubes used as a cold cathode in a field emission microscope reveal the pentagonal emission sites and hence the atomic structure of the nanotube tips.
机译:通过在不同催化剂浓度下对植物碳源樟脑进行热分解,可以在硅,镍涂层的硅和钴涂层的硅基板上实现取向良好的高纯度多壁碳纳米管(CNT)的三维生长。对平行平板二极管结构中生长的纳米管的场发射研究表明,它们是一种高效的发射器,其导通场约为1 V /μm(对于10μA / cm〜2),阈值场为大约4 V / mum(对于10 mA / cm〜2)。最大电流密度在5.6 V /μm时在20-30 mA / cm〜2的范围内,具有明显的可逆性。樟脑生长的CNT发射器的长期稳定性测试表明,在连续操作下的使用寿命约为5个月。已经解决了一个新功能,即碳纳米管的金属辅助电子发射。在场发射显微镜中用作冷阴极的隔离纳米管揭示了五边形的发射位点,因此揭示了纳米管尖端的原子结构。

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