The goal of this work was to find single crystals of semi-insuulating gallium arsenide from melts with varying chrome contents in low concentration areas as wall as to examine the effect of chrome concentration in a welt on the electrical properties of gallium arsenide. The residual impurities content in gallium arsenide depends on the purity of the original material and on the conditions for producing single crystals. Noncompensated gallium arsenide can be a p or a type conductivity. Semi-insulating properties are obtained only by compensating for the levels of fine impurities by deep levels of the opposite type. In the technologies used today, for production of single crystals of gallium arsenide, the predominant electrically-active impurities are silicon (shallow donor) and carbon (shallow acceptor). Chrome (a deep acceptor) and oxygen (a deep donor) are used as alloying impurities to compensate for the fine impurities.
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