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A comprehensive study on the surface tribology of Ta thin film using molecular dynamics simulation: The effect of TaN interlayer, power and temperature

机译:Ta薄膜表面摩擦学的分子动力学模拟研究:TaN中间层,功率和温度的影响

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Molecular dynamics simulations (MD) was carried out to investigate the surface nano-tribology of grown Ta sputtered thin films on stainless steel with and without TaN interlayer. Ta and TaN films were deposited by magnetron sputtering technique at different temperatures. Argon and nitrogen mixture gas was used to create TaN interlayer. Using AFM technique, the surface of sputtered thin films was characterized. MD simulation results were validated by experimental results and a good consistency was observed the two techniques. The effects of TaN interlayer and process parameters were investigated. The results showed that the surface roughness can be remarkably improved by using a TaN seed layer. Higher sputtering powers at lower temperatures provide the best condition to produce smoother Ta films.
机译:进行了分子动力学模拟(MD),以研究在具有和不具有TaN夹层的不锈钢上生长的Ta溅射薄膜的表面纳米摩擦学。通过磁控溅射技术在不同温度下沉积Ta和TaN薄膜。使用氩气和氮气混合气来生成TaN中间层。使用原子力显微镜技术,对溅射薄膜的表面进行了表征。通过实验结果验证了MD仿真结果,并观察到两种技术具有良好的一致性。研究了氮化钽中间层和工艺参数的影响。结果表明,通过使用TaN种子层可以显着改善表面粗糙度。较低温度下较高的溅射功率为生产更光滑的Ta膜提供了最佳条件。

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